发明名称 Row decoder scheme for flash memory devices
摘要 Devices and methods for enhancing decoding a non-volatile memory device are discussed. One aspect of the present invention includes a method for decoding a non-volatile memory device. The method includes decoding a set of input signals to present a row decoded signal; driving a node by a driver that receives the decoded signal; transferring a negative supply to a word line by a transfer mechanism; and limiting a rate of flow of electric charge from the negative supply to the word line so as to inhibit an undesired rate of flow of electric charge from the negative supply to the word line.
申请公布号 US2003086327(A1) 申请公布日期 2003.05.08
申请号 US20010007294 申请日期 2001.11.08
申请人 SCHRECK JOHN 发明人 SCHRECK JOHN
分类号 G11C8/08;G11C16/08;(IPC1-7):G11C8/00 主分类号 G11C8/08
代理机构 代理人
主权项
地址