| 摘要 |
In a semiconductor integrated circuit device comprising a CMOS circuit, the CMOS circuit operating at a high speed, consuming a small amount of power, is achieved. In particular, acceleration of the operating speed under low voltage is achieved. The semiconductor integrated circuit device of the invention comprises a main circuit including a CMOS circuit, a changeover circuit, a substrate bias control circuit and a switching circuit and, in accordance with a changing signal from the changeover circuit, switches states of a substrate of a MOS transistor of the main circuit between a state in which normal supply voltage as well as ground voltage are applied and a state in which forward bias is applied. The changeover circuit detects a drop in supply voltage, etc. and outputs changing signals. Accordingly, a CMOS circuit, and a CMOS-LSI chip as well as a semiconductor integrated circuit device comprising the CMOS circuit can be provided which are capable of widening the voltage range in which the CMOS circuit can operate, reducing the leak currents of the CMOS circuit in the standby mode in the range of high supply voltage, and, thereby, reducing the power consumption of the CMOS circuit, and increasing the operating speed of the CMOS circuit in the range of low supply voltage.
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