发明名称 Semiconductor memory and method of producing the same
摘要 A semiconductor memory incorporates cylinder-type stacked capacitors. Each capacitor has a lower electrode and an upper electrode facing each other via a dielectric film. The lower electrode of each capacitor is supported by a beam-like insulator at a side portion of the electrode, the side portion being apart from a lower edge of the lower electrode.
申请公布号 US2003085420(A1) 申请公布日期 2003.05.08
申请号 US20020286893 申请日期 2002.11.04
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 ITO EIJI;ITO HITOSHI
分类号 H01L21/02;H01L21/8242;H01L27/02;H01L27/108;(IPC1-7):H01L21/824;H01L21/336;H01L29/76;H01L29/94;H01L31/119;H01L21/20;H01L29/00 主分类号 H01L21/02
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