Method of filling substrate depressions with silicon oxide by high-density-plasma vapor phase deposition with participation of H2O2 or H2O as reaction gas

摘要

A first silicon-containing reaction gas and an oxygen precursor representing a further reaction gas are fed to the reaction chamber and a high-density plasma, preferably above 1016 ions/m3, is produced. Through at least partial substitution of the precursor O2 that is normally used, H2O2 and/or H2O are fed to the reaction chamber in order to further reduce the sputtering effects due to O2 ions during the deposition, which lead to undesirable redepositions of the SiO2 on side walls of the depression.