| 摘要 |
A phase-change memory cell (10) may be formed with a carbon-containing interfacial layer (20) that heats a phase-change material (24). By forming the phase-change material (24) in contact, in one embodiment, with the carbon containing interfacial layer (20), the amount of heat that may be applied to the phase-change material (24), at a given current and temperature, may be increased. In some embodiments, the performance of the interfacial layer (20) at high temperatures may be improved by using a wide band gap semiconductor material such as silicon carbide.
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