发明名称 METHOD FOR PHOTOLITHOGRAPHIC STRUCTURING BY MEANS OF A CARBON HARD MASK LAYER WHICH HAS A DIAMOND-LIKE HARDNESS AND IS PRODUCED BY MEANS OF A PLASMA-ENHANCED DEPOSITION METHOD
摘要 According to the invention, a carbon hard mask layer (2) is applied to a substrate to be structured (1) by means of a plasma-enhanced deposition method in such a way that it has a diamond-like hardness in at least one vertical section of a layer. During the production of said diamond-type vertical section of a layer, the deposition parameters are adjusted in such a way that certain diamond-type growth regions are removed in situ by means of subsequent etching processes, and other diamond-type regions remain.
申请公布号 WO03038875(A2) 申请公布日期 2003.05.08
申请号 WO2002DE04034 申请日期 2002.10.29
申请人 INFINEON TECHNOLOGIES AG;CZECH, GUENTHER;FUELBER, CARSTEN;KIRCHHOFF, MARKUS;STEGEMANN, MAIK;VOGT, MIRKO;WEGE, STEPHAN 发明人 CZECH, GUENTHER;FUELBER, CARSTEN;KIRCHHOFF, MARKUS;STEGEMANN, MAIK;VOGT, MIRKO;WEGE, STEPHAN
分类号 G03F7/36;H01L21/033;H01L21/308;H01L21/311;H01L21/314 主分类号 G03F7/36
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