发明名称 SURFACE ACOUSTIC WAVE DEVICE AND SUBSTRATE THEREOF
摘要 <p>Provided are a substrate for a surface-acoustic-wave device and a surface-acoustic-wave device, in which an intermediate layer for controlling crystal characteristics of a piezoelectric layer does not easily separate from a diamond layer.A surface-acoustic-wave device substrate 20 and a surface-acoustic-wave device 10, according to the present invention, comprises a diamond layer 22, an intermediate layer 24 disposed on the diamond layer 22, and a piezoelectric layer 26 disposed on the intermediate layer 24, the piezoelectric layer 26 being made of LiNbO3 or LiTaO3, the intermediate layer 24 being made of AlN.</p>
申请公布号 EP1309085(A1) 申请公布日期 2003.05.07
申请号 EP20010932282 申请日期 2001.05.25
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 NAKAHATA, HIDEAKI;HACHIGO, AKIHIRO;TATSUMI, NATSUO;IMAI, TAKAHIRO;SHIKATA, SHINICHI
分类号 H03H9/25;H03H9/02;(IPC1-7):H03H9/25 主分类号 H03H9/25
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