发明名称 |
SURFACE ACOUSTIC WAVE DEVICE AND SUBSTRATE THEREOF |
摘要 |
<p>Provided are a substrate for a surface-acoustic-wave device and a surface-acoustic-wave device, in which an intermediate layer for controlling crystal characteristics of a piezoelectric layer does not easily separate from a diamond layer.A surface-acoustic-wave device substrate 20 and a surface-acoustic-wave device 10, according to the present invention, comprises a diamond layer 22, an intermediate layer 24 disposed on the diamond layer 22, and a piezoelectric layer 26 disposed on the intermediate layer 24, the piezoelectric layer 26 being made of LiNbO3 or LiTaO3, the intermediate layer 24 being made of AlN.</p> |
申请公布号 |
EP1309085(A1) |
申请公布日期 |
2003.05.07 |
申请号 |
EP20010932282 |
申请日期 |
2001.05.25 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NAKAHATA, HIDEAKI;HACHIGO, AKIHIRO;TATSUMI, NATSUO;IMAI, TAKAHIRO;SHIKATA, SHINICHI |
分类号 |
H03H9/25;H03H9/02;(IPC1-7):H03H9/25 |
主分类号 |
H03H9/25 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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