发明名称 |
GATE TECHNOLOGY FOR STRAINED SURFACE CHANNEL AND STRAINED BURIED CHANNEL MOSFET DEVICES |
摘要 |
A method of fabricating a semiconductor device including providing a semiconductor heterostructure, the heterostructure having a relaxed Si<SUB>1-x</SUB>Ge<SUB>x </SUB>layer on a substrate, a strained channel layer on the relaxed Si<SUB>1-x</SUB>Ge<SUB>x </SUB>layer, and a Si<SUB>1-y</SUB>Ge<SUB>y </SUB>layer; removing the Si<SUB>1-y</SUB>Ge<SUB>y </SUB>layer; and providing a dielectric layer. The dielectric layer includes a gate dielectric of a MISFET. In alternative embodiments, the heterostructure includes a SiGe spacer layer and a Si layer. |
申请公布号 |
EP1307917(A2) |
申请公布日期 |
2003.05.07 |
申请号 |
EP20010961913 |
申请日期 |
2001.08.06 |
申请人 |
AMBERWAVE SYSTEMS CORPORATION |
发明人 |
FITZGERALD, EUGENE, A.;HAMMOND, RICHARD;CURRIE, MATTHEW |
分类号 |
H01L29/10;H01L21/20;H01L21/28;H01L21/336;H01L29/78;(IPC1-7):H01L23/00 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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