发明名称 Feedback write method for programmable memory
摘要 An integrated circuit (10) includes an array of state-change devices (30), first (34) and second (32) decoder circuits for selecting a particular state-change device (52). A voltage source (36) is coupled to the first decoder circuit and sense circuitry (38) is coupled to the second decoder to receive an electrical parameter from the selected state-change device and to detect a particular value of the electrical parameter. A control circuit (40) is coupled to the voltage source, the first and second decoders, and the sense circuitry to select a first voltage from the voltage source to alter the selected state-change device and to select a second voltage from the voltage source when the sense circuitry detects the particular value of the electrical parameter.
申请公布号 EP1308960(A2) 申请公布日期 2003.05.07
申请号 EP20020257303 申请日期 2002.10.22
申请人 HEWLETT-PACKARD COMPANY 发明人 VAN BROCKLIN, ANDREW L.;FRICKE, PETER;WANG, S. JONATHAN
分类号 G11C17/06;G11C11/56;G11C13/00;G11C16/02;G11C16/04;G11C16/06 主分类号 G11C17/06
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