发明名称 |
Feedback write method for programmable memory |
摘要 |
An integrated circuit (10) includes an array of state-change devices (30), first (34) and second (32) decoder circuits for selecting a particular state-change device (52). A voltage source (36) is coupled to the first decoder circuit and sense circuitry (38) is coupled to the second decoder to receive an electrical parameter from the selected state-change device and to detect a particular value of the electrical parameter. A control circuit (40) is coupled to the voltage source, the first and second decoders, and the sense circuitry to select a first voltage from the voltage source to alter the selected state-change device and to select a second voltage from the voltage source when the sense circuitry detects the particular value of the electrical parameter. |
申请公布号 |
EP1308960(A2) |
申请公布日期 |
2003.05.07 |
申请号 |
EP20020257303 |
申请日期 |
2002.10.22 |
申请人 |
HEWLETT-PACKARD COMPANY |
发明人 |
VAN BROCKLIN, ANDREW L.;FRICKE, PETER;WANG, S. JONATHAN |
分类号 |
G11C17/06;G11C11/56;G11C13/00;G11C16/02;G11C16/04;G11C16/06 |
主分类号 |
G11C17/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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