| 摘要 |
A data storage medium (20) includes several stacked layers (30,40,50,60,70,80,90,140,160,180) which can be conducting, insulating, resistive, or capable of changing between two or more states or phases. A data storage device includes the data storage medium (20) and an energy source (10) that can form nanometer-scaled data bits (110,111,112,113,150) in regions of the data storage medium (20). The data bits (110,111,112,113,150) can include holes through some of the stacked layers (30,40,50,60,70,80,90,140,160,180) or phase changes in portions of the layers capable of changing between two or more states. Method of using such a storage medium (20) to store nanometer scaled data bits (110,111,112,113,150). <IMAGE> <IMAGE>
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