发明名称 |
Bipolar transistor with a base layer having an extremely low resistance and method for fabricating the same |
摘要 |
A base region structure involved in a bipolar transistor, wherein the base region comprises a compound semiconductor epitaxial layer (7) formed in a recessed portion (5) provided by etching in an upper region of a semiconductor substrate (1) and the recessed portion (5) has a depth corresponding to a thickness of the compound semiconductor epitaxial layer (7) so that the base region has a top surface positioned at the same level as a top surface of the semiconductor substrate (1). <IMAGE> |
申请公布号 |
EP0704907(B1) |
申请公布日期 |
2003.05.07 |
申请号 |
EP19950115150 |
申请日期 |
1995.09.26 |
申请人 |
NEC COMPOUND SEMICONDUCTOR DEVICES, LTD. |
发明人 |
KATO, HIROSHI |
分类号 |
H01L29/73;H01L21/203;H01L21/318;H01L21/331;H01L29/165;H01L29/205;H01L29/732;H01L29/737 |
主分类号 |
H01L29/73 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|