Three dimensional large storage random access memory device

摘要

A random access memory device (300) includes one or more planes (200) of memory arrays (100) stacked on top of each other, each plane (200) being manufactured separately, and each array (100) with the plane (200) being enabled/disabled separately, thus enabling each memory array (100) to be individually tested. Memory planes (200) may be stacked on top of each other and on top of an active circuit plane (390) to make a large capacity memory device (300). The memory may be volatile or non-volatile by using appropriate memory cells (140) as base units. The memory plane (200) may be fabricated separately from the active circuitry and may be formed from a glass substrate. Each memory plane (200) may be individually selected (or enabled) via plane memory select transistors (240). The array (100) may be individually selected (or enable) via array select transistor (160). These transistors (160) may be formed from amorphous silicon transistor(s) and/or thin-film transistor(s). The data but (310), array select bus (330), and the plane select bus (340) provide electrical connections between the memory planes (200) and the active circuit plane (390) via side contact pads on each plane (200).