Aluminum interconnects for integrated circuits comprising titanium under and overlayers

摘要

An interconnect for an integrated circuit includes an underlayer (14) comprising titanium having reduced contamination for improved electromigration and for supporting another layer. An intermediate layer (18) comprising aluminum is deposited over the underlayer. An overlayer (20) comprising titanium having increased contamination relative to the underlayer to provide a reduced sheet resistance is applied over the intermediate layer. The resulting interconnect has improved reliability and functionality. A method is also provided.