发明名称 |
Process for the manufacture of a wiring for contact holes |
摘要 |
<p>Production of a wiring comprises forming contact holes in an insulating layer (2) to form a first wiring layer (1); cleaning one surface of the contact holes; forming a barrier layer (4) on the surface of the contact holes; forming an AlGeCu-containing second wiring layer (5) on the surface of the insulating layer using a low pressure PVD process to fill the holes; forming and structuring a mask layer (7); and structuring the second wiring layer using the mask layer in an anisotropic etching process. Preferred Features: The second wiring layer is formed by depositing a AlGeCu layer at substrate temperatures of more than 100 degrees C. The cleaning step is carried out using a wet chemical process and/or a plasma etching process. An antireflection layer made of titanium nitride is formed on the surface of the second wiring layer.</p> |
申请公布号 |
EP1168431(A3) |
申请公布日期 |
2003.05.07 |
申请号 |
EP20010115187 |
申请日期 |
2001.06.22 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
BUERKE, AXEL;SCHMIDBAUER, SVEN;HAHN, JENS, DR. |
分类号 |
H01L21/285;H01L21/768;H01L23/532;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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