发明名称 |
Method and system for controlling the plasma treatment of a titanium nitride layer formed by a chemical vapor deposition process |
摘要 |
In general, the present invention is directed to a method of forming titanium nitride layers. In one illustrative embodiment, the method comprises forming a layer of titanium nitride by a chemical vapor deposition process, sensing a thickness of the layer of titanium nitride, and providing the sensed thickness of the layer of titanium nitride to a controller. The method further comprises determining at least one parameter of a plasma process to be performed on the layer of titanium nitride based upon the sensed thickness of the layer of titanium nitride and performing the plasma process comprised of the determined at least one parameter on the layer of titanium nitride.
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申请公布号 |
US6558963(B1) |
申请公布日期 |
2003.05.06 |
申请号 |
US20000625711 |
申请日期 |
2000.07.25 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
EVANS ALLEN LEWIS;FULFORD H. JIM |
分类号 |
H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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地址 |
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