| 摘要 |
In a semiconductor device, formed are a lower capacitor electrode on an element isolation film on a silicon substrate, a capacitor insulating film and an upper capacitor electrode. A silicon oxide film is formed on the entire surface of the silicon substrate. On the silicon oxide substrate, formed is a resist pattern that covers a region extending from the inside of a periphery of the upper capacitor electrode to the outside of the periphery thereof. Sidewalls that cover side faces of a gate electrode and the lower capacitor electrode, and a sidewall that covers a side face and an upper periphery of the upper capacitor electrode, are formed by performing anisotropic etching.
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