| 摘要 |
A III-N compound semiconductor bipolar transistor structure and method of manufacture. An epitaxial layer structure is formed over a substrate. The epitaxial layer structure includes a nucleation layer, a buffer layer, an emitter layer containing first type dopants (conductive type) and a base layer containing second type dopants (conductive type). Ion implantation is conducted to form a first conductive region within the base layer for forming a collector terminal. A portion of the emitter layer is etched for forming an emitter terminal. In addition, two ion-implantation regions may form inside the base layer. The ion-implantation regions serve separately as the collector terminal and the emitter terminal of the bipolar transistor, respectively, so that a more planar transistor structure is formed.
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