发明名称 |
Method of forming insulating film and process for producing semiconductor device |
摘要 |
A method of forming an insulating film which includes the steps of: dissolving in a solvent a first and second polymer which each comprise methylpolysiloxane as the main component and one of which has a weight average molecular weight at least 10 times that of the other to thereby prepare a chemical solution; applying the chemical solution to a semiconductor substrate to form a coating film; and heat-treating the coating film to thereby form an organosilicon oxide film. The weight-average molecular weight of the first polymer is preferably at least 100 times that of the second polymer. Thus, an insulating organosilicon oxide film having a low dielectric constant and high cracking resistance is formed from a coating fluid.
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申请公布号 |
US6558747(B2) |
申请公布日期 |
2003.05.06 |
申请号 |
US20010014593 |
申请日期 |
2001.12.14 |
申请人 |
KABUSHIKI KAISHA TOSHIBA;JSR CORPORATION |
发明人 |
NAKATA REMPEI;YAMADA NOBUHIDE;MIYAJIMA HIDESHI;KOJIMA AKIHIRO;KUROSAWA TAKAHIKO;HAYASHI EIJI;SEO YOUNGSOON;SHIOTA ATSUSHI;YAMADA KINJI |
分类号 |
H01L21/312;(IPC1-7):B05D379/397 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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