发明名称
摘要 <p>PURPOSE:To obtain a TFT possessed of necessary characteristics in a device wherein TFTs are laid on a substrate. CONSTITUTION:For instance, in an active matrix type liquid crystal display, a peripheral circuit is formed of crystalline silicon film grown in crystal parallel to the surface of a substrate, and a pixel part is formed of crystalline silicon film grown in crystal vertical to the surface of a substrate. TFTs high in mobility are provided in the peripheral circuit, and TFTs lessened in OFF-state current to be enhanced in charge retention are provided in the pixel art.</p>
申请公布号 JP3403811(B2) 申请公布日期 2003.05.06
申请号 JP19940131416 申请日期 1994.05.20
申请人 发明人
分类号 G02F1/1345;G02F1/136;G02F1/1368;H01L21/20;H01L21/336;H01L29/78;H01L29/786;(IPC1-7):H01L21/336 主分类号 G02F1/1345
代理机构 代理人
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