发明名称 Block write circuit and method for wide data path memory device
摘要 A block write circuit in a memory device having a wide internal data path performs block write and data masking functions. The memory device includes a plurality of data terminals adapted to receive respective data signals, and a plurality of array groups each including a plurality of arrays and each array includes a plurality of memory cells. A plurality of input/output line groups each include a plurality of input/output lines coupled to the arrays of an associated array group. The block write circuit comprises a plurality of write driver groups, each write driver group including a plurality of write driver circuits having outputs coupled to respective data lines in an associated data line group. Each write driver circuit includes an input and develops a data signal on its output responsive to a data signal applied on its input. A multiplexer circuit includes a plurality of inputs coupled to respective data terminals, and a plurality of output subgroups. Each output subgroup is associated with a respective input, and each output group includes a plurality of outputs coupled to the write driver circuits in an associated write driver group. The multiplexer circuit operates responsive to a control in a block write mode to couple each of its inputs to the outputs in the associated output subgroup. A masking circuit may also mask data from respective input/output lines responsive to masking signals.
申请公布号 USRE38109(E1) 申请公布日期 2003.05.06
申请号 US20010029572 申请日期 2001.12.20
申请人 MICRON TECHNOLOGY, INC. 发明人 MERRITT TODD A.;BUNKER LAYNE
分类号 G11C11/407;G11C7/10;G11C11/401;G11C11/4096;(IPC1-7):G11C7/00 主分类号 G11C11/407
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