发明名称 Method and structure for measuring bridge induced by mask layout amendment
摘要 A method for measuring bridge induced by mask layout amendment. Provide a mask with a layout that comprises a conductor line pattern, numerous gate patterns which are connected with conductor line pattern, and numerous contact pattern groups, each contact pattern group has numerous contact patterns and at least surrounds one terminal, which does not contact with conductor line, of one corresponding gate pattern. Then, amend this layout and transfer amended layout into a substrate to form a conductor line, numerous gates and numerous contact groups in and on this substrate. Finally, electrically couple these contact groups with a terminal, then, apply an electrical signal into this conductor line and measure whether the electrical signal appears at this terminal.
申请公布号 US6559476(B2) 申请公布日期 2003.05.06
申请号 US20010888584 申请日期 2001.06.26
申请人 UNITED MICROELECTRONICS CORP. 发明人 LIN CHENG-NAN
分类号 H01L23/544;(IPC1-7):H01L23/58 主分类号 H01L23/544
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