| 摘要 |
The present invention generally provides a process and an apparatus for depositing low dielectric constant films on a substrate. The low dielectric constant films are phosphorus doped mesoporous oxide films formed by depositing and curing a phosphorus containing sol-gel precursor to form an oxide film having interconnecting pores of uniform diameter, and then annealing the film in an inert gas atmosphere or exposing the film to an oxidizing atmosphere containing a reactive oxygen species to form a phosphorus doped mesoporous oxide film.
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