发明名称 Virtual and backgate supply line circuit
摘要 A semiconductor integrated circuit includes: a first MOS transistor having one source/drain electrode for receiving a power supply voltage and the other source/drain electrode connected to a virtual power supply line; a second MOS transistor having one source/drain electrode connected to the virtual power supply line and the other source/drain electrode connected to a backgate power supply line; and a third MOS transistor having one source/drain electrode connected to the virtual power supply line and the backgate electrode connected to the backgate power supply line. When the first and second transistors are turned on, a voltage of the backgate electrode is forwardly biased to the one source/drain electrode in the third MOS transistor, thereby improving the operation speed of an internal circuit including the third MOS transistors in an active period.
申请公布号 US6559708(B2) 申请公布日期 2003.05.06
申请号 US20010758360 申请日期 2001.01.12
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 NOTANI HIROMI
分类号 H03K19/00;H03K19/0944;(IPC1-7):G05F3/02 主分类号 H03K19/00
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