发明名称 |
Virtual and backgate supply line circuit |
摘要 |
A semiconductor integrated circuit includes: a first MOS transistor having one source/drain electrode for receiving a power supply voltage and the other source/drain electrode connected to a virtual power supply line; a second MOS transistor having one source/drain electrode connected to the virtual power supply line and the other source/drain electrode connected to a backgate power supply line; and a third MOS transistor having one source/drain electrode connected to the virtual power supply line and the backgate electrode connected to the backgate power supply line. When the first and second transistors are turned on, a voltage of the backgate electrode is forwardly biased to the one source/drain electrode in the third MOS transistor, thereby improving the operation speed of an internal circuit including the third MOS transistors in an active period.
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申请公布号 |
US6559708(B2) |
申请公布日期 |
2003.05.06 |
申请号 |
US20010758360 |
申请日期 |
2001.01.12 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
NOTANI HIROMI |
分类号 |
H03K19/00;H03K19/0944;(IPC1-7):G05F3/02 |
主分类号 |
H03K19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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