Memory cell decoder not including a charge pump

摘要

A memory cell decoder includes a first node and a first transmitting portion adapted to output a high voltage signal to the first node responsive to a first selection signal. A control portion is adapted to generate a first control signal responsive to an address and discharge the first node responsive to the first control signal. A second transmitting portion is adapted to output a word line enable signal responsive to the first selection signal and the first control signal. A semiconductor memory device includes: a memory cell array having an array of memory cells; a plurality of word lines corresponding to the memory cells; a plurality of memory cell decoders adapted to select word lines responsive to an address; a first pre decoder adapted to decode the address and generate a plurality of block selection signals, the block selection signals selecting predetermined corresponding blocks in the memory cell decoders; a second pre decoder adapted to generate a plurality of word line enable signals responsive to the address, the word line enable signals for enabling corresponding word lines responsive to the address.