发明名称 |
Test pattern for evaluating a process of silicide film formation |
摘要 |
The present invention relates to a semiconductor device, and more particularly, to a test pattern for evaluating a process of silicide film formation. The test pattern in accordance with the present invention includes: a silicon substrate having an active region and a field region; a first pattern composed of a cross resistor pattern of a polycide layer formed on the field region; and a second pattern composed of polycide layer and a silicide layer formed on the active region. The second pattern includes: a pair of polycide patterns composed of a first polycide strip and a second polycide strip extended in parallel, being spaced from each other a predetermined interval on an insulating film formed on the active region; and an active silicide strip formed between the first polycide strip and the second polycide strip.
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申请公布号 |
US6559475(B1) |
申请公布日期 |
2003.05.06 |
申请号 |
US20000704760 |
申请日期 |
2000.11.03 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
KIM JONG-CHAE |
分类号 |
H01L21/66;H01L21/3205;H01L23/52;H01L23/544;(IPC1-7):H01L23/58;G01R27/08;G01R31/26;G01R27/26 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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