发明名称 Semiconductor device tester and semiconductor device test method
摘要 A plurality of measuring positions on a sample are sequentially irradiated with electron beams having identical cross sectional shapes, currents produced in the sample when the individual measuring positions are irradiated with electron beams are measured and the measured currents or physical amounts derived from the measured currents are displayed on a two-dimensional plane as a function of measuring position.
申请公布号 US6559662(B1) 申请公布日期 2003.05.06
申请号 US20000722074 申请日期 2000.11.27
申请人 FAB SOLUTIONS, INC. 发明人 YAMADA KEIZO;ITAGAKI YOUSUKE;USHIKI TAKEO;TSUJIDE TOHRU
分类号 G01B15/00;G01N27/00;G01Q30/02;G01Q30/04;G01R1/06;G01R31/302;G01R31/311;H01J37/22;H01J37/28;H01L21/66;(IPC1-7):G01R31/305 主分类号 G01B15/00
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