发明名称 |
MOS heterostructure, semiconductor device with the structure, and method for fabricating the semiconductor device |
摘要 |
An MOS heterostructure includes: a single crystal silicon substrate; an insulating film formed on the substrate; and a conductive film formed on the insulating film. The substrate includes a plurality of terraces and steps, which have been formed as a result of rearrangement of silicon atoms on the surface of the substrate. Each of the step is located in a boundary between an adjacent pair of the terraces. The insulating film contains crystalline silicon dioxide that has grown epitaxially over the steps.
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申请公布号 |
US6559518(B1) |
申请公布日期 |
2003.05.06 |
申请号 |
US19990404255 |
申请日期 |
1999.09.22 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NIWA MASAAKI |
分类号 |
H01L21/28;H01L29/04;H01L29/10;H01L29/423;H01L29/51;H01L29/94;(IPC1-7):H01L23/58;H01L29/06 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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