| 摘要 |
Plural p+-type regions are formed on a silicon substrate, and thereafter, an n-type epitaxial growth layer is formed. Narrow concave portions are formed to extend between the surface of the epitaxial growth layer 14 and the silicon substrate and to have the almost the same lateral sectional shape. As a result, remaining parts, which are defined by the concave portions, of the epitaxial growth layer on p+-type field limiting rings are separated from the silicon substrate. Thus, a depletion layer is spread beyond the field limiting rings and a large forward voltage-resistance can be realized.
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