PROCESS FOR PRODUCING AN ULTRAVIOLET-TRANSPARENT CONDUCTIVE FILM

摘要

The present invention provides an ultraviolet-transparent conductive film comprising a Ga2O3 crystal. The film has a transparency in the wavelength range of 240 to 800 nm, or 240 to 400 nm, and an electric conductivity induced by an oxygen deficiency or dopant in the Ga2O3 crystal. The dopant includes at least one element selected from the group consisting of the Sn, Ge, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W. The ultraviolet-transparent conductive film is formed through either one of a pulsed-laser deposition method, spattering method, CVD method and MBE method, under the conditions with a substrate temperature of 600 to 1500 DEG C and an oxygen partial pressure of 0 to 1 Pa.