| 摘要 |
A semiconductor device and a process for forming the device includes a conductor that overlies an insulating layer. In one embodiment, the conductor includes a first conductive portion, a second conductive portion, and a third conductive portion. The second conductive portion lies between the first and third conductive portions. The first conductive portion includes a first element, and the third conductive portion includes a metal and silicon without a significant amount of the first element. In another embodiment, the conductor is a gate electrode or a capacitor electrode. The conductor includes a first conductive portion, a second conductive portion, a third conductive portion, and a fourth conductive portion. The second conductive portion lies between the first and third conductive portions and has a different composition compared to the first, third, and fourth conductive portion. The third conductive portion lies between the second and fourth conductive portions and has a different composition compared to the first and fourth conductive portions. |
