| 摘要 |
<p>A method and system for separating impurities, such as large abrasive particles and foreign matter from an abrasive polishing slurry stored in tank (14) prior to a Chemical Mechanical Polishing (CMP) procedure (22) performed on a surface of a semiconductor wafer. Impurities greater than about 25 microns are removed by a filter (10) in an initial filtration process. The filtrate is then introduced to a solid bowl sedimentation-type centrifuge (12) to continuously remove particles greater than 0.5 microns through nozzles (18) thereby providing a polishing slurry for final utilization in the Chemical Mechanical Polishing (CMP) procedure (22) that reduces damage to the surface of the polished semiconductor wafer.</p> |
