METHOD FOR ETCHING NITRIDE LAYER USING RIE TYPE DRY ETCHING APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for etching a nitride layer using RIE-type dry etching apparatus for manufacturing a semiconductor device is provided to easily etch a nitride layer by controlling etching process condition. CONSTITUTION: A semiconductor substrate(26) having a nitride layer is loaded in a process chamber(20) of an RIE-type semiconductor dry etching apparatus. The inner pressure of the process chamber(20) is controlled at the pressure of 50-70 mTorr. The process chamber(20) is supplied with O2 gas of 30-40 sccm and CHF3 gas of 90-110 sccm. The O2 and CHF3 gas are transformed to plasma state by applying high-frequency power of 1500-1700 watt to an upper electrode(22) or a lower electrode(24) of the process chamber(20).