The invention relates to a method for producing high-purity silicon, especially for photovoltaic purposes and preferably for using in the production of wafers, according to which silane is thermally decomposed in order to obtain silicon. The inventive method is characterised in that gaseous silane is injected into a silicon melt and, following the injection of the silane, the melt is cast and solidified.
申请公布号
WO03035548(A2)
申请公布日期
2003.05.01
申请号
WO2002EP11519
申请日期
2002.10.15
申请人
SILICON TECHNOLOGIES AS;HUGO, FRANZ;BJOERSETH, ALF;CECCAROLI, BRUNO;MAURITS, JAN
发明人
HUGO, FRANZ;BJOERSETH, ALF;CECCAROLI, BRUNO;MAURITS, JAN