Method of analyzing silicon-germanium alloys and apparatus for manufacturing semiconductor layer structures with silicon-germanium alloy layers

摘要

In order to improve a method of analyzing Si-Ge alloys, with which a Raman spectrum of a sample is recorded and Raman frequencies and Raman intensities of the Si-Si modes and the Si-Ge modes of the alloy layer are evaluated, such that any strain and any Ge portion in an alloy layer can be ascertained in a simple and as exact a manner as possible, it is provided for one or more spectrum contributions lying outside the Si-Ge modes and the Si-Si modes to be evaluated as oscillation modes.