High-k gate oxides with buffer layers of titanium for MFOS single transistor memory applications

摘要

A method of fabricating a memory device includes preparing a silicon substrate; depositing a layer of high-k insulator on the substrate; depositing a layer of buffering metal on the high-k layer; depositing a layer of ferroelectric material on the buffering layer by metal organic chemical vapor deposition; forming a top electrode on the ferroelectric material; and completing the device.