BACK ILLUMINATED IMAGER WITH ENHANCED UV TO NEAR IR SENSITIVITY

摘要

The present invention is a back illuminated image array device (10) and a method of constructing such a device. The device (10) is generally comprised of an array circuitry layer (16), a front layer (14), and a quartz layer (12). The array circuitry layer (16) is defined on one surface of the front layer (14). The quartz layer (12) is mounted on the other surface of the front layer (14). The method of fabricating the device is generally comprised of the following steps The method provides a wafer (30) having a thick silicon layer (32), an oxide layer (34) on the thick silicon layer (32), and a front silicon layer (36) on the oxide layer (34). The front layer (36) has a first surface and a second surface with the second surface proximal to the oxide layer. Array circuitry is formed on the first surface of the front layer. A temporary layer (40) is applied to the surface of the array circuitry (24). The thick silicon layer (32) and the oxide layers (34) are removed from the wafer (30), thereby, exposing the second surface of the front layer. A quartz layer is applied to the second surface. The temporary layer (40) is removed from the array surface.