发明名称 IMPROVED METAL BARRIER BEHAVIOR BY SIC:H DEPOSITION ON POROUS MATERIALS
摘要 A sealing dielectric layer (1) is applied between a porous dielectric layer (2) and a metal diffusion barrier layer (7). The sealing dielectric layer closes the pores on the surface and sidewalls of the porous dielectric layer. This invention allows the use of a thin metal diffusion barrier layer without creating pinholes in the metal diffusion barrier layer. The sealing dielectric layer is a CVD deposited film having the composition SixCy:Hz.
申请公布号 WO03005438(A3) 申请公布日期 2003.05.01
申请号 WO2002US20704 申请日期 2002.06.25
申请人 DOW CORNING CORPORATION;MEYNEN, HERMAN;WEIDNER, WILLIAM, KENNETH;IACOPI, FRANCESCA;MALHOUITRE, STEPHANE 发明人 MEYNEN, HERMAN;WEIDNER, WILLIAM, KENNETH;IACOPI, FRANCESCA;MALHOUITRE, STEPHANE
分类号 H01L21/312;H01L21/768;H01L23/522;H01L23/532 主分类号 H01L21/312
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