| 摘要 |
<p>When manufacturing a semiconductor storage device including a longitudinal MISFET having a source region, a channel forming region, a drain region, and a gate electrode formed on a side wall portion of the channel forming region via a gate insulation film, boron which is a reverse-conductive with respect to phosphor diffused in a polycrystal silicon film (10) constituting the channel forming region is counterdoped from the n-type polycrystal silicon film (7) constituting the source region of the longitudinal MISFET to the aforementioned polycrystal silicon film (10). This reduces effective impurities concentration in the polycrystal silicon film (10), thereby realizing a longitudinal MISFET having little leak current (off current).</p> |
