发明名称 METHOD OF FORMING FINE PATTERN
摘要 A method of forming a fine resist pattern which includes the step of forming on a substrate a photosensitive layer from a photosensitive composition comprising at least a compound which generates an acid upon irradiation with light and a fluoropolymer, wherein the fluoropolymer is represented by the formula 1: -M1-M2-A1- 1 wherein structural unit M1 is a structural unit which is derived from a fluoromonomer and in which any of the carbon atoms constituting part of the polymer main chain has at least one fluorine atom bonded thereto structural unit M2 is a structural unit comprising an aliphatic ring structure incorporated in the polymer main chain structural unit A1 is a structural unit derived from a monomer copolymerizable with the structural units M1 and M2 and the fluoropolymer has an acid-reactive substituent Y.
申请公布号 WO03036390(A1) 申请公布日期 2003.05.01
申请号 WO2002JP10243 申请日期 2002.10.02
申请人 SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC.;DAIKIN INDUSTRIES, LTD.;TORIUMI, MINORU;YAMAZAKI, TAMIO;WATANABE, HIROYUKI;ITANI, TOSHIRO;ARAKI, TAKAYUKI;KOH, MEITEN;ISHIKAWA, TAKUJI 发明人 TORIUMI, MINORU;YAMAZAKI, TAMIO;WATANABE, HIROYUKI;ITANI, TOSHIRO;ARAKI, TAKAYUKI;KOH, MEITEN;ISHIKAWA, TAKUJI
分类号 G03F7/004;G03F7/039;(IPC1-7):G03F7/039;H01L21/027 主分类号 G03F7/004
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