发明名称 |
Semiconductor controlled rectifier for use in electrostatic discharge protection circuit |
摘要 |
An electrostatic discharge (ESD) protection circuit includes an MOS transistor acting as a trigger for the circuit. A drain region of the MOS transistor is formed by an N-type heavily doped impurity region which overlaps an N-type well region. Further, a P-type heavily doped impurity region is formed in the N-type well region. The N-type and P-type heavily doped impurity regions are electrically connected to an input/output pad. The ESD protection circuit exhibits a reduced input capacitance at the pad, and a reduced breakdown voltage of the MOS transistor.
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申请公布号 |
US2003081362(A1) |
申请公布日期 |
2003.05.01 |
申请号 |
US20020251979 |
申请日期 |
2002.09.23 |
申请人 |
LEE DONG-JIN;SONG KI-WHAN |
发明人 |
LEE DONG-JIN;SONG KI-WHAN |
分类号 |
H01L27/04;H01L27/02;H02H9/00;(IPC1-7):H02H9/00 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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