Method for forming thin film and method for forming electronic device

摘要

The invention provides thin films of low molecular compounds. A thin-film forming area on a surface of a silicon substrate is allowed to have high affinity for a thin-film forming material. For this purpose, a self-assembled film having an atomic group in common with a molecule constituting the thin-film forming material is formed in the thin-film forming area. Thereafter, a solution is discharged to the surface of the silicon substrate by an ink jet process.