发明名称 |
Method for obtaining elliptical and rounded shapes using beam shaping |
摘要 |
A method of fabricating a mask (316) for patterning a semiconductor wafer. The mask (316) includes elliptical (340) or rounded features formed using an elliptical-shaped energy beam (350). Undesired stair-step shaped edges (344) of the oval (340) or rounded features formed by using a substantially circular-shaped energy beam to form the oval or rounded features are smoothed with the elliptical-shaped energy beam (350). A method of fabricating a semiconductor device with the mask (316) is included. The elliptical-shaped energy beam (350) may also be used to directly pattern a semiconductor wafer.
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申请公布号 |
US2003082461(A1) |
申请公布日期 |
2003.05.01 |
申请号 |
US20010032389 |
申请日期 |
2001.10.26 |
申请人 |
CARPI ENIO LUIZ |
发明人 |
CARPI ENIO LUIZ |
分类号 |
G03F7/20;(IPC1-7):G03F9/00;G03C5/00 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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