发明名称 |
CREATION OF A POLARIZABLE LAYER IN THE BURIED OXIDE OF SILICON-ON-INSULATOR SUBSTRATES FOR THE FABRICATION OF NON-VOLATILE MEMORY |
摘要 |
This invention concerns a process of forming a polarizable layer in a buried oxide layer of a silicon-on-insulator substrate for the fabrication of non-volatile memory. This process comprises implanting, through the active silicon layer, Si ions into the buried oxide layer at an ion implantation energy selected so that the implanted ion has its peak concentration between 5-50 nm from the silicon/buried oxide interface. The implantation step can occur while externally heating the silicon-on-insulator substrate at a temperature between 25-300 degrees Celsius. After implantation, an annealing step may be completed to repair any damage the implantation may have created in the silicon-on-insulator substrate.
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申请公布号 |
US2003082887(A1) |
申请公布日期 |
2003.05.01 |
申请号 |
US20010985023 |
申请日期 |
2001.11.01 |
申请人 |
HUGHES HAROLD L.;MCMARR PATRICK J.;LAWRENCE REED K. |
发明人 |
HUGHES HAROLD L.;MCMARR PATRICK J.;LAWRENCE REED K. |
分类号 |
H01L21/762;H01L21/8246;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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地址 |
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