发明名称 Phase change material memory device
摘要 A lower electrode may be covered by a protective film to reduce the exposure of the lower electrode to subsequent processing steps or the open environment. As a result, materials that may have advantageous properties as lower electrodes may be utilized despite the fact that they may be sensitive to subsequent processing steps or the open environment.
申请公布号 US2003082908(A1) 申请公布日期 2003.05.01
申请号 US20010020757 申请日期 2001.10.30
申请人 LOWREY TYLER A. 发明人 LOWREY TYLER A.
分类号 H01L45/00;(IPC1-7):H01L21/44 主分类号 H01L45/00
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