发明名称 Semiconductor pressure detecting device
摘要 The voltage corresponding to the pressure outputted from a Wheatstone bridge having resistors R1 to R4 is amplified by a differential amplifier 3 and operational amplifiers OP1, OP2, and then outputted through an output terminal 4 to an external device as the output voltage VOUT. The offset voltage ZSOUT is outputted from the operational amplifier OP10. The output voltage VOUT and the offset voltage ZSOUT are fed back to the reference source voltage Vsen by operational amplifiers OP3 to OP5. In consequence, a non-linear output property of output-attenuating or output-increasing type can be easily obtained, while errors due to the offset voltage ZSOUT can be diminished.
申请公布号 US2003080760(A1) 申请公布日期 2003.05.01
申请号 US20020137409 申请日期 2002.05.03
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 TAKEUCHI TAKANOBU
分类号 G01L9/04;G01L9/06;H01L29/84;(IPC1-7):G01R27/08 主分类号 G01L9/04
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