| 摘要 |
A nonvolatile memory device includes two metal layers, which act respectively as a floating gate and a control gate, and each of which has a downwardly extended portion. Thereby, a surface area per fixed unit cell area is increased, or alternatively a unit cell area per fixed surface area is reduced. Therefore, the nonvolatile memory device has enhanced programming and erasing properties and also improved reliability. Furthermore, a method for forming the nonvolatile memory device is provided with simplified processes.
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