METHOD FOR FORMING GATE ELECTRODE OF SEMICONDUCTOR DEVICE AND GATE ELECTRODE USING THE SAME

摘要

PURPOSE: A method for forming a gate electrode of a semiconductor device and a gate electrode using the same are provided to improve operation speed by forming a minus sloped gate electrode. CONSTITUTION: A stopping oxide layer and an insulation layer are sequentially formed on a semiconductor substrate(30) having a source and drain electrode(32,34). After forming a photoresist pattern on the insulation layer, an insulation pattern having a hole is formed by etching the insulation layer using reaction gas for generating polymers. At this time, the width of the upper portion of the hole is larger than that of the lower portion of the hole. After removing the photoresist pattern, a conductive layer is filled into the hole of the insulation pattern. A polishing process is carried out with the conductive layer in order to expose the insulation pattern. A minus sloped gate electrode(48) is formed by removing the insulation pattern.