发明名称 Storage capacitor structure
摘要 A storage capacitor structure comprising a first capacitor electrode on a substrate, a capacitor dielectric layer on the first capacitor electrode and a second capacitor electrode on the capacitor dielectric layer, a passivation layer on the second capacitor electrode and a pixel electrode layer on the passivation layer. The second capacitor electrode has an area smaller than the first capacitor electrode. The passivation layer has an opening that exposes a portion of the second capacitor electrode. The pixel electrode layer and the second capacitor electrode are electrically connected through the opening in the passivation layer.
申请公布号 US2003080368(A1) 申请公布日期 2003.05.01
申请号 US20020065380 申请日期 2002.10.10
申请人 CHI MEI OPTOELECTRONICS CORPORATION 发明人 WU YUAN-LIANG;WANG TONG-JUNG;KUO CHIN-JUNG
分类号 G02F1/1368;H01L21/02;(IPC1-7):H01L27/108 主分类号 G02F1/1368
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