发明名称 |
Storage capacitor structure |
摘要 |
A storage capacitor structure comprising a first capacitor electrode on a substrate, a capacitor dielectric layer on the first capacitor electrode and a second capacitor electrode on the capacitor dielectric layer, a passivation layer on the second capacitor electrode and a pixel electrode layer on the passivation layer. The second capacitor electrode has an area smaller than the first capacitor electrode. The passivation layer has an opening that exposes a portion of the second capacitor electrode. The pixel electrode layer and the second capacitor electrode are electrically connected through the opening in the passivation layer.
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申请公布号 |
US2003080368(A1) |
申请公布日期 |
2003.05.01 |
申请号 |
US20020065380 |
申请日期 |
2002.10.10 |
申请人 |
CHI MEI OPTOELECTRONICS CORPORATION |
发明人 |
WU YUAN-LIANG;WANG TONG-JUNG;KUO CHIN-JUNG |
分类号 |
G02F1/1368;H01L21/02;(IPC1-7):H01L27/108 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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