发明名称 |
RUTHENIUM SILICIDE PROCESSING METHODS |
摘要 |
The invention includes methods of processing ruthenium silicide. In one implementation, a ruthenium silicide processing method sequentially includes forming ruthenium silicide 24, 26 over front and back sides of a semiconductor substrate. The backside ruthenium silicide is exposed to a chlorine and fluorine containing aqueous solution effective to remove at least some ruthenium silicide therefrom. Then, the substrate backside is exposed to an aqueous ruthenium oxide etchant solution. Then, the substrate backside is exposed to an aqueous hydrofluoric acid containing solution. |
申请公布号 |
WO02075803(A3) |
申请公布日期 |
2003.05.01 |
申请号 |
WO2002US07648 |
申请日期 |
2002.03.11 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
ANDREAS, MICHAEL, T.;MORGAN, PAUL, A. |
分类号 |
H01L21/02;H01L21/285;H01L21/306;H01L21/3205;H01L21/3213;H01L21/8242;H01L27/108 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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