| 摘要 |
PURPOSE: To control voltage drop in a non-silicide region and improve breakdown resistance in an ESD protection element. CONSTITUTION: An N-type diffusion layer 17 is formed deeper than an LDD diffusion layer 15a in a formation region of an ESD protection element, for example. Thereafter, a silicide protection mask 21 is formed in a portion which becomes a non-silicide region 24 in a formation region of an ESD protection element simultaneously with formation of gate sidewall films 20a, 20b. Thereafter, source/drain diffusion layers 22a, 22b are formed deeper than the N-type diffusion layer 17. Then, a surface of the source/drain diffusion layers 22a, 22b is turned to silicide.
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